Details

Title

Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells

Journal title

Archives of Electrical Engineering

Yearbook

2019

Volume

vol. 68

Issue

No 4

Authors

Keywords

energy levels ; gallium arsenide ; intermediate band solar cells ; ion implantation ; thermal admittance spectroscopy

Divisions of PAS

Nauki Techniczne

Coverage

925-931

Publisher

Polish Academy of Sciences

Date

2019.12.02

Type

Artykuły / Articles

Identifier

DOI: 10.24425/aee.2019.130692 ; ISSN: 1427-4221 ; eISSN: 2300-2506

Source

Archives of Electrical Engineering; 2019; vol. 68; No 4; 925-931
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