In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
The ethylene vinyl acetate (EVA) is widely used for solar modules encapsulation. During lamination process EVA melts and chemical bonds between polymer chains are created. Its number is tightly related to cross-linking degree and it is consider as a major quality reference for module encapsulation. The lamination can be described as a process with two stages: melting and curing where the typical temperature for curing is in the range from 145 to 175°C. In the present study, for the first time, comparison of three commercial available EVA foils with low curing temperature EVA (EVA LOW). For this reason, the temperature of following lamination processes was set from a range from 115 to 175°C. The behavior of cured EVA films under investigation EVA was determined with two approaches: with extraction and with optical methods. The results indicate the applicability of these methods for the EVA cross-linking characterization. Finally, the extraordinary behavior of EVA LOW foil was noticed.
This paper presents maps of spatial distributions of the short circuit current Isc(x,y) and the open circuit voltage Uoc(x,y) of the investigated low cost solar cells. Visible differences in values of these parameters were explained by differences in the serial and shunt resistances determined for different points of solar cells from measurements of I–V characteristics. The spectral dependence of the photo voltage of solar cell is also shown, discussed and interpreted in the model of amorphous and crystal silicon.