Nowadays, there are growing demands on the accuracy of production. Most of this is reflected in precise manufacturing, such as the investment casting process. Foundries are looking for causes of defects in some cases for a very long time, and it may happen that the source of defects is completely different from what was originally assumed. During the casting process there exist potential causes of defects as oxygen inclusions. This paper represents a summary of the beginnings of a wider research that will address the problems of gating systems in investment casting technology. In general, the influence of the melt flow is underestimated and the aim of the whole scientific research is to demonstrate the significant influence of laminar or turbulent flow on the resulting casting quality. Specifically, the paper deals with the analysis of the most frequent types of defects found in castings made of expensive types of materials casted in an open atmosphere and demonstration of connection with the design of gating systems in the future.
Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature.